A High-Efficient Transformer Using Bond Wires for Si RF IC

This paper presents a design of a monolithic transformer using bond wires. The proposed transformer structure has several advantages such as high power handling and high efficiency. It shows that the measured insertion loss at the 1.9 GHz range is −1.54 dB (70%), which is higher than the spiral transformer of the same size. Also, it shows a phase error of less than 1 degree. key words: CMOS RF integrated circuit, monolithic transformers, bond wires, balun